JPH0524672B2 - - Google Patents
Info
- Publication number
- JPH0524672B2 JPH0524672B2 JP58090640A JP9064083A JPH0524672B2 JP H0524672 B2 JPH0524672 B2 JP H0524672B2 JP 58090640 A JP58090640 A JP 58090640A JP 9064083 A JP9064083 A JP 9064083A JP H0524672 B2 JPH0524672 B2 JP H0524672B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon substrate
- electrode
- electrode layer
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090640A JPS59217360A (ja) | 1983-05-25 | 1983-05-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090640A JPS59217360A (ja) | 1983-05-25 | 1983-05-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59217360A JPS59217360A (ja) | 1984-12-07 |
| JPH0524672B2 true JPH0524672B2 (en]) | 1993-04-08 |
Family
ID=14004094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58090640A Granted JPS59217360A (ja) | 1983-05-25 | 1983-05-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59217360A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652444A (en) * | 1995-09-22 | 1997-07-29 | Hughes Electronics | Structure and method for making FETs and HEMTs insensitive to hydrogen gas |
| US8802461B2 (en) | 2011-03-22 | 2014-08-12 | Micron Technology, Inc. | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing |
-
1983
- 1983-05-25 JP JP58090640A patent/JPS59217360A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59217360A (ja) | 1984-12-07 |
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